Technologies

Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit,  by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.

Uniform coverage with porous layers over extended surfaces is beneficial for many purposes. Depending on the nature/composition, thickness and interfaces of the layer, this kind of special coverage can assure pivotal properties such as transparency, bendability, high surface reactivity, intermixing capability. In the long list of desired porous materials, transparent oxides find application in the fields of Photovoltaics, Sensing, Photocatalysis, Water Purification and Splitting, Lithium Batteries and many more.

The proposed technology offers a novel and versatile method for detecting cracks in insulating materials of electrically polarized metal devices, i.e. dielectric coatings on metals, especially in low-pressure gas environments. It uses an ionized plasma that interacts uniformly with the insulating surface, allowing to detect defects invisible to the naked eye. The detection occurs in a single test without changing the environmental conditions and without risking harmful electrical discharges.