Technologies

Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit,  by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.

The proposed technology deals with the development of active SERS (Surface Enhanced Raman Scattering) substrates ad hoc designed for diagnostics of cultural heritage. The substrates are prepared starting from common commercial 'polishing film' sheets (lapping optical fibers) showing an intrinsic roughness (48- 1000 nm) that favors the SERS effect. A pattern of silver or gold nanoparticles are deposited on these films through Pulsed Laser Deposition (PLD).