Technologies

Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit,  by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.

The constant demand for more powerful and energy-efficient electronic devices than existing ones is challenging scientists and companies to develop innovative solutions that can address such primary technological needs. Based on a recent scientific discovery made by our team we have developed a technology for superfast and extremely scalable logic and computing circuits with minimal energy losses, which has the potential to become the leading technology in the future world of largescale computing and telecommunication infrastructures.