Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit, by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.
Technologies
In this section it is possible to view, also through targeted research, the technologies inserted in the PROMO-TT Database. For further information on the technologies and to contact the CNR Research Teams who developed them, it is necessary to contact the Project Manager (see the references at the bottom of each record card).
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Quartz tuning forks are employed in scanning atomic force microscopy (AFM), as well as in some derived techniques, as high sensitivity detectors of interactions, of both conservative and dissipative kind, between the AFM nanometric probe and the investigated surface. However, the contributions of the two kinds of interaction result as convoluted in the sensor response, preventing fully quantitative measurements of the quantities of interest.