Technologies

Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit,  by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.

We present a new concept of ultra-compact, configurable and implantable brain computer interface (BCI). The device can be applied to monitor or stimulate, with high temporal and spatial accuracy, neural activity of the brain. It allows implementation of closed-loop algorithms in real time applications. The system can be also used in vitro to monitor or induce cell growth or as tDCS tool. The system can be customized (microelectrodes materials and shapes) to guarantee the best solution for the specific application.