Technologies

Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit,  by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.

This invention comprises an interrogation and readout differential method for chemical sensors based on Surface Plasmon Resonances (SPR). The integration of the SPR sensing unit (chip or other), as intermediate reflecting element of a Fabry-Perot (FP) optical resonator, is the starting point for the application of this method.

Polymer development is approaching to a new stage of advancement in which new functionalities especially in combination with conductive polymers and nanomaterials are more effective. In this context the study of new composites is the key to enable the development of disruptive technologies as additive manufacturing. Increasing electrical conductivity open the way to a new class of objects to be prototyped rapidly at low cost with a high level of customization.