Nowadays, to properly design and develop advanced materials capable to preserve for long times their performance under aggressive environments such as power generation plants, renewables, nuclear reactors and electronics of new generation, transport on ground and on space, aeronautics, catalysis, biomedical implants, the optimization of metallurgical processes involved is crucial.
Technologies
In this section it is possible to view, also through targeted research, the technologies inserted in the PROMO-TT Database. For further information on the technologies and to contact the CNR Research Teams who developed them, it is necessary to contact the Project Manager (see the references at the bottom of each record card).
Displaying results 1 - 7 of 7
The innovative manipulation device - micro-gripper - allows the gripping by vacuum of micro-components and integrates a novel system to support their release. The manipulation of millimetric and sub-millimetric components can present several issues, often negligible at the macro-scale.
Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit, by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.
The NanoMicroFab infrastructure, support companies operating in the field of micro and nanoelectronics through the supply of materials, development of processes, design, fabrication and characterization of materials and devices. NanoMicroFab makes use of existing CNR facilities of the Institute of Microelectronics and Microsystems, the Institute of Photonics and Nanotechnologies and the Institute for the Structure of Matter and provides: • a complete line of development of devices based on wide band gap semiconductors.
The present technology deals with jewels based on shape memory alloys and fabricated through additive manufacturing. In ICMATE-Lecco laboratories, several NiTi-based rings have been fabricated through a powder bed fusion technology (selective laser melting technique).
The invention consists in a special regulation method of the horizontal axes of operating and rubbing wheels of a centerless grinding machine coupled with an opportune blade profile, allowing a continuous regulation of blade rest angle (angle between tangent to blade profile at the contact point with the work piece and the horizon, denoted by γ) and workpiece height (denoted by hw), without requiring blade substitution and/or manual regulations.
The working principle of VTTJ is extremely simple. Two parts (at least one with tube shape) are screwed one into the other with a mechanical interference that creates a metallic seal. One part presents a cylindrical slot, the other presents a conical ring, whose diameter is slightly larger than the one of the cylindrical slot. When the two parts are screwed together, a plastic deformation occurs in the mechanical interference region.