Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit, by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.
Technologies
In this section it is possible to view, also through targeted research, the technologies inserted in the PROMO-TT Database. For further information on the technologies and to contact the CNR Research Teams who developed them, it is necessary to contact the Project Manager (see the references at the bottom of each record card).
Displaying results 1 - 4 of 4
Chemical solution deposition of metal-organic precursors have favoured the research and development of thin films of simple and complex oxides such as Pb(Zr,Ti)O3, and Al2O3, up to their industrial application in pyroelectric and capacitor devices. Deposition methods used are spin-on and dip-coating. The advantages of the techniques are:
(i) low cost of equipment and chemicals
(ii) large area deposition
(iii) low crystallisation temperatures
The invention is a synthetic method to prepare colloidal nanomaterials of V-VI-VII semiconductors that do not contain toxic elements. This is the first method for the synthesis of mixed anion nanomaterials without toxic elements at large, which permitted to obtain, among others, bismuth chalcohalide nanocrystals that are arguably considered as one of main candidates to be the next big thing for light energy conversion.
The proposing team that works at CNR ISTEC has recently patented a technology for the production of the Smart Polycrystals (SP), i.e. transparent YAG-based ceramic polycrystals (Y3Al5O12) variably doped with rare earths ions and transition metals ions. The SPs solve the problem of the reduction of the efficiency in the solid state laser systems caused by the inhomogeneous heating of the single crystals during the emission process.