Nowadays, to properly design and develop advanced materials capable to preserve for long times their performance under aggressive environments such as power generation plants, renewables, nuclear reactors and electronics of new generation, transport on ground and on space, aeronautics, catalysis, biomedical implants, the optimization of metallurgical processes involved is crucial.
Technologies
In this section it is possible to view, also through targeted research, the technologies inserted in the PROMO-TT Database. For further information on the technologies and to contact the CNR Research Teams who developed them, it is necessary to contact the Project Manager (see the references at the bottom of each record card).
Displaying results 1 - 15 of 16
Shape memory alloys (SMA) have attracted increasing interest in recent years as materials suitable for solid state refrigeration. One of the most attractive methods is mechanical deformation to induce the phase transformation and to generate and absorb heat through the elastocaloric effect.
The technology has been developed over the past 25 years, implementing new innovative components during time. The methodology provides a set of 2D acoustic images in different frequency intervals, for revealing the structural damage (detachments, delaminations, structural weakening) in multi-layer structures and artworks (mural paintings, frescoes, ceramic panels, panel paintings). Recently, interesting results have been obtained in studies of the water related deterioration effects on antique masonry structures.
Method for extracting, with high yield, phycobiliproteins from cyanobacterial and/or algal biomass, obtaining aqueous extracts characterized by high concentration of pigments (4-5 mg/mL) and a purity, at least equal to food/cosmetic grade (P≥2).
Silicon nanowires (SiNWs) are 1D structures with diameter ranging from few tens to hundreds of nanometers and length varying from few tens of nanometers to millimiters. SiNWs are fabricated in the labs of the IMM-CNR, Rome Unit, by using bottom-up technologies such as plasma enhanced chemical vapor deposition (PECVD) at low growth temperature ((≤350°C), allowing the use of plastic and glassy substrates. Their electrical properties can be tuned by controlling the p/n doping during the growth.
The invention consists of a method and apparatus for the delivery at low pressure (equal to or less than 10-7 Torr) of monoatomic fluorine for reaction with surfaces in an ultra-clean environment. Thanks to the low pressure values involved in the proposed method, the risks associated with the use of fluorine are reduced to a minimum.
The development of new materials with near-infrared emission (NIR, 700 – 1000 nm) represent an important target in the technological progress of innovative active components for OLED devices (including flexible ones), surveillance systems, autonomous driving, night vision sensors, fiber optic telecommunications and medical systems. In all these fields it still lacks a commercial NIR-OLED technology.
The proposed technology offers a novel and versatile method for detecting cracks in insulating materials of electrically polarized metal devices, i.e. dielectric coatings on metals, especially in low-pressure gas environments. It uses an ionized plasma that interacts uniformly with the insulating surface, allowing to detect defects invisible to the naked eye. The detection occurs in a single test without changing the environmental conditions and without risking harmful electrical discharges.
The environment as well as the food production provide a number of both natural and synthetic compounds whose effects on human being as an organism have not yet been determined nor investigated.
The invention is a synthetic method to prepare colloidal nanomaterials of V-VI-VII semiconductors that do not contain toxic elements. This is the first method for the synthesis of mixed anion nanomaterials without toxic elements at large, which permitted to obtain, among others, bismuth chalcohalide nanocrystals that are arguably considered as one of main candidates to be the next big thing for light energy conversion.
AIS aim is a robotized inclinometer measurement in standard inclinometer boreholes. The deep measurements have multiple applications, including: evaluating the rate of deep-seated ground deformation in landslide areas, evaluating the volume of deep-seated landslides and assessing landslide hazards. The AIS is composed by an electronic control manager, an inclinometer probe and an electric motor equipped with a high precision encoder for handling and continuous control of the probe in the borehole.
An interoperable and modular Digital Geospatial Ecosystem (DGE) is proposed, designed, implemented and tested in order to: collect in real time, manage and share geographic data; make usable tools and functionalities to support actions to prevent, monitor and mitigate impacts from extreme events as well as to prepare for and respond to emergency situations. The DGE is composed of the following modules:
The present technology deals with jewels based on shape memory alloys and fabricated through additive manufacturing. In ICMATE-Lecco laboratories, several NiTi-based rings have been fabricated through a powder bed fusion technology (selective laser melting technique).
The invention consists in a special regulation method of the horizontal axes of operating and rubbing wheels of a centerless grinding machine coupled with an opportune blade profile, allowing a continuous regulation of blade rest angle (angle between tangent to blade profile at the contact point with the work piece and the horizon, denoted by γ) and workpiece height (denoted by hw), without requiring blade substitution and/or manual regulations.
Electrochromism is an optoelectronic characteristic of particular interest because it can be exploited in the creation of technologies such as smart windows (Smart Windows) to promote energy efficiency, automotive, sensor or visualization devices. Electrochromic materials change their optoelectronic characteristics, showing different colors depending on the applied electric field.